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Module: IGBT | diode/transistor | boost chopper | Urmax: 650V | Ic: 10A
Module: IGBT | diode/transistor | boost chopper | Urmax: 650V | Ic: 10A
Code: EB1296616850
Manufacturer's product code: GD10PJX65F1S
Manufacturer's product code:
GD10PJX65F1S
Manufacturer, Brand: STARPOWER SEMICONDUCTOR
Manufacturer, Brand:
STARPOWER SEMICONDUCTOR
35,83 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
| Type of module | IGBT |
| Semiconductor structure | diode/transistor |
| Topology | boost chopper |
| Topology | IGBT three-phase bridge OE output |
| Topology | NTC thermistor |
| Topology | three-phase diode bridge |
| Max. off-state voltage | 650V |
| Collector current | 10A |
| Case | F1.1 |
| Electrical mounting | Press-in PCB |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 20A |
| Technology | Trench FS IGBT |
| Mechanical mounting | screw |