Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 26A | Idm: 90A | 200W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 26A | Idm: 90A | 200W
EB Kood: EB712375287
Tootja kauba kood: MSC080SMA120B4
Tootja kauba kood:
MSC080SMA120B4
Tootja, kaubamärk: MICROCHIP TECHNOLOGY
Tootja, kaubamärk:
MICROCHIP TECHNOLOGY
14,84 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
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| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 26A |
| Pulsed drain current | 90A |
| Power dissipation | 200W |
| Case | TO247-4 |
| On-state resistance | 0.1Ω |
| Mounting | THT |
| Gate charge | 64nC |
| Kind of channel | enhanced |
| Features of semiconductor devices | Kelvin terminal |