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Transistor: IGBT | SiC SBD | 650V | 50A | 357W | TO247-3
Transistor: IGBT | SiC SBD | 650V | 50A | 357W | TO247-3
Code: EB1021135565
Manufacturer's product code: BGH50N65HS1
Manufacturer's product code:
BGH50N65HS1
Manufacturer, Brand: BASiC SEMICONDUCTOR
Manufacturer, Brand:
BASiC SEMICONDUCTOR
18,87 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | IGBT |
Technology | Field Stop |
Technology | SiC SBD |
Technology | Trench |
Collector-emitter voltage | 650V |
Collector current | 50A |
Power dissipation | 357W |
Case | TO247-3 |
Gate-emitter voltage | ±20V |
Pulsed collector current | 200A |
Mounting | THT |
Gate charge | 308nC |
Kind of package | tube |
Turn-on time | 54ns |
Turn-off time | 256ns |
Features of semiconductor devices | integrated anti-parallel diode |