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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 60A | Idm: 190A | 375W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 60A | Idm: 190A | 375W
Code: EB1942229851
Manufacturer's product code: B2M032120Y
Manufacturer's product code:
B2M032120Y
Manufacturer, Brand: BASiC SEMICONDUCTOR
Manufacturer, Brand:
BASiC SEMICONDUCTOR
25,82 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-MOSFET |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 1.2kV |
Drain current | 60A |
Pulsed drain current | 190A |
Power dissipation | 375W |
Case | TO247PLUS-4 |
Gate-source voltage | -4...18V |
On-state resistance | 50mΩ |
Mounting | THT |
Gate charge | 40nC |
Kind of package | tube |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |