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Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -50A | Idm: -200A
Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -50A | Idm: -200A
Code: EB982311292
Manufacturer's product code: SISS27DN-T1-GE3
Manufacturer's product code:
SISS27DN-T1-GE3
Manufacturer, Brand: VISHAY
Manufacturer, Brand:
VISHAY
1,38 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | -30V |
Drain current | -50A |
Pulsed drain current | -200A |
Power dissipation | 36W |
Case | PowerPAK® 1212-8 |
Gate-source voltage | ±20V |
On-state resistance | 9mΩ |
Mounting | SMD |
Gate charge | 0.14µC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhancement |