Tulkot latviski

Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -50A | Idm: -200A

EB Kood: EB982311292

Tootja kauba kood: 
SISS27DN-T1-GE3

Tootja, kaubamärk: 
VISHAY

 1,38  
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorP-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage-30V
Drain current-50A
Pulsed drain current-200A
Power dissipation36W
CasePowerPAK® 1212-8
Gate-source voltage±20V
On-state resistance9mΩ
MountingSMD
Gate charge0.14µC
Kind of packagereel
Kind of packagetape
Kind of channelenhancement