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Transistor: N-JFET/N-MOSFET | GaN | unipolar | HEMT,cascode | 650V
Transistor: N-JFET/N-MOSFET | GaN | unipolar | HEMT,cascode | 650V
Code: EB856638182
Manufacturer's product code: GAN041-650WSBQ
Manufacturer's product code:
GAN041-650WSBQ
Manufacturer, Brand: NEXPERIA
Manufacturer, Brand:
NEXPERIA
21,76 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-JFET/N-MOSFET |
Technology | GaN |
Polarisation | unipolar |
Kind of transistor | cascode |
Kind of transistor | HEMT |
Drain-source voltage | 650V |
Drain current | 33.4A |
Pulsed drain current | 240A |
Power dissipation | 187W |
Case | SOT429 |
Case | TO247 |
Gate-source voltage | ±20V |
On-state resistance | 35mΩ |
Mounting | THT |
Gate charge | 22nC |
Kind of package | tube |