Tulkot latviski

Transistor: N-JFET/N-MOSFET | GaN | unipolar | HEMT,cascode | 650V

EB Kood: EB856638182

Tootja kauba kood: 
GAN041-650WSBQ

Tootja, kaubamärk: 
NEXPERIA

 21,69  
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorN-JFET/N-MOSFET
TechnologyGaN
Polarisationunipolar
Kind of transistorcascode
Kind of transistorHEMT
Drain-source voltage650V
Drain current33.4A
Pulsed drain current240A
Power dissipation187W
CaseSOT429
CaseTO247
Gate-source voltage±20V
On-state resistance35mΩ
MountingTHT
Gate charge22nC
Kind of packagetube