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Transistor: N-JFET/N-MOSFET | GaN | unipolar | HEMT,cascode | 650V
Transistor: N-JFET/N-MOSFET | GaN | unipolar | HEMT,cascode | 650V
EB Kood: EB856638182
Tootja kauba kood: GAN041-650WSBQ
Tootja kauba kood:
GAN041-650WSBQ
Tootja, kaubamärk: NEXPERIA
Tootja, kaubamärk:
NEXPERIA
21,69 €
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Type of transistor | N-JFET/N-MOSFET |
Technology | GaN |
Polarisation | unipolar |
Kind of transistor | cascode |
Kind of transistor | HEMT |
Drain-source voltage | 650V |
Drain current | 33.4A |
Pulsed drain current | 240A |
Power dissipation | 187W |
Case | SOT429 |
Case | TO247 |
Gate-source voltage | ±20V |
On-state resistance | 35mΩ |
Mounting | THT |
Gate charge | 22nC |
Kind of package | tube |