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Transistor: IGBT | 600V | 44A | 115W | TO3PN
Transistor: IGBT | 600V | 44A | 115W | TO3PN
Code: EB5584586
Manufacturer's product code: GT50JR22(STA1,E,S)
Manufacturer's product code:
GT50JR22(STA1,E,S)
Manufacturer, Brand: TOSHIBA
Manufacturer, Brand:
TOSHIBA
6,35 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | IGBT |
Collector-emitter voltage | 600V |
Collector current | 44A |
Power dissipation | 115W |
Case | TO3PN |
Gate-emitter voltage | ±25V |
Pulsed collector current | 100A |
Mounting | THT |
Kind of package | tube |
Turn-on time | 250ns |
Turn-off time | 330ns |
Features of semiconductor devices | integrated anti-parallel diode |