• Transistor: N-MOSFET | GigaMOS™ | unipolar | 40V | 600A | Idm: 2kA | 830W image 1
  • Transistor: N-MOSFET | GigaMOS™ | unipolar | 40V | 600A | Idm: 2kA | 830W image 2
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Transistor: N-MOSFET | GigaMOS™ | unipolar | 40V | 600A | Idm: 2kA | 830W

Code: EB1056981223

Manufacturer's product code: 
MMIX1T600N04T2

Manufacturer, Brand: 
IXYS

45,03 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment. 
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Product Properties

Type of transistorN-MOSFET
TechnologyGigaMOS™
TechnologyTrenchT2™
Polarisationunipolar
Drain-source voltage40V
Drain current600A
Pulsed drain current2kA
Power dissipation830W
CaseSMPD
Gate-source voltage±20V
On-state resistance1.3mΩ
MountingSMD
Gate charge590nC
Kind of channelenhanced
Reverse recovery time100ns