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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 27A | Idm: 80A | 241W

EB Kods: EB667129382

Ražotāja preces kods: 
B1M080120HC

Ražotājs, zīmols: 
BASiC SEMICONDUCTOR

 22,46 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current27A
Pulsed drain current80A
Power dissipation241W
CaseTO247-3
Gate-source voltage-5...20V
On-state resistance80mΩ
MountingTHT
Gate charge149nC
Kind of packagetube
Kind of channelenhanced