Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 27A | Idm: 80A | 241W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 27A | Idm: 80A | 241W
EB Kood: EB667129382
Tootja kauba kood: B1M080120HC
Tootja kauba kood:
B1M080120HC
Tootja, kaubamärk: BASiC SEMICONDUCTOR
Tootja, kaubamärk:
BASiC SEMICONDUCTOR
23,38 €
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| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 27A |
| Pulsed drain current | 80A |
| Power dissipation | 241W |
| Case | TO247-3 |
| Gate-source voltage | -5...20V |
| On-state resistance | 80mΩ |
| Mounting | THT |
| Gate charge | 149nC |
| Kind of package | tube |
| Kind of channel | enhanced |