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Transistor: P-MOSFET | unipolar | -30V | -1.3A | 0.5W | SuperSOT-3
Transistor: P-MOSFET | unipolar | -30V | -1.3A | 0.5W | SuperSOT-3
EB Kods: EB669416673
Ražotāja preces kods: FDN352AP
Ražotāja preces kods:
FDN352AP
Ražotājs, zīmols: ONSEMI
Ražotājs, zīmols:
ONSEMI
0,72 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | P-MOSFET |
| Technology | PowerTrench® |
| Polarisation | unipolar |
| Drain-source voltage | -30V |
| Drain current | -1.3A |
| Power dissipation | 0.5W |
| Case | SuperSOT-3 |
| Gate-source voltage | ±25V |
| On-state resistance | 0.4Ω |
| Mounting | SMD |
| Gate charge | 1.9nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |
| Features of semiconductor devices | logic level |