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Transistor: P-MOSFET | unipolar | -30V | -1.3A | 0.5W | SuperSOT-3
Transistor: P-MOSFET | unipolar | -30V | -1.3A | 0.5W | SuperSOT-3
Code: EB669416673
Manufacturer's product code: FDN352AP
Manufacturer's product code:
FDN352AP
Manufacturer, Brand: ONSEMI
Manufacturer, Brand:
ONSEMI
0,72 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | P-MOSFET |
Technology | PowerTrench® |
Polarisation | unipolar |
Drain-source voltage | -30V |
Drain current | -1.3A |
Power dissipation | 0.5W |
Case | SuperSOT-3 |
Gate-source voltage | ±25V |
On-state resistance | 0.4Ω |
Mounting | SMD |
Gate charge | 1.9nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | logic level |