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Module: IGBT | single transistor | Urmax: 1.7kV | Ic: 21A | SOT227B

EB Kods: EB285780516

Ražotāja preces kods: 
IXBN42N170A

Ražotājs, zīmols: 
IXYS

 50,56  
Ar PVN / gb
Pieejams piegādātāja noliktavā 4 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of moduleIGBT
Semiconductor structuresingle transistor
Max. off-state voltage1.7kV
Collector current21A
CaseSOT227B
Electrical mountingscrew
Gate-emitter voltage±20V
Pulsed collector current265A
Power dissipation313W
TechnologyBiMOSFET™
Features of semiconductor deviceshigh voltage
Mechanical mountingscrew