Tulkot latviski
Module: IGBT | single transistor | Urmax: 1.7kV | Ic: 21A | SOT227B
Module: IGBT | single transistor | Urmax: 1.7kV | Ic: 21A | SOT227B
EB Kood: EB285780516
Tootja kauba kood: IXBN42N170A
Tootja kauba kood:
IXBN42N170A
Tootja, kaubamärk: IXYS
Tootja, kaubamärk:
IXYS
50,86 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos 4 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
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Type of module | IGBT |
Semiconductor structure | single transistor |
Max. off-state voltage | 1.7kV |
Collector current | 21A |
Case | SOT227B |
Electrical mounting | screw |
Gate-emitter voltage | ±20V |
Pulsed collector current | 265A |
Power dissipation | 313W |
Technology | BiMOSFET™ |
Features of semiconductor devices | high voltage |
Mechanical mounting | screw |