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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 84A | Idm: 295A | 715W

EB Kods: EB1018007413

Ražotāja preces kods: 
DIF120SIC028

Ražotājs, zīmols: 
DIOTEC SEMICONDUCTOR

 35,05 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current84A
Pulsed drain current295A
Power dissipation715W
CaseTO247-4
Gate-source voltage-5...20V
On-state resistance26mΩ
MountingTHT
Gate charge373nC
Kind of packagetube
Kind of channelenhancement
Features of semiconductor devicesKelvin terminal