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Transistor: P-MOSFET | TrenchP™ | unipolar | -100V | -76A | 298W | 70ns
Transistor: P-MOSFET | TrenchP™ | unipolar | -100V | -76A | 298W | 70ns
EB Kods: EB391976030
Ražotāja preces kods: IXTH76P10T
Ražotāja preces kods:
IXTH76P10T
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
11,45 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Technology | TrenchP™ |
Polarisation | unipolar |
Drain-source voltage | -100V |
Drain current | -76A |
Power dissipation | 298W |
Case | TO247-3 |
Gate-source voltage | ±15V |
On-state resistance | 25mΩ |
Mounting | THT |
Gate charge | 197nC |
Kind of package | tube |
Kind of channel | enhanced |
Reverse recovery time | 70ns |