Tulkot latviski
Transistor: P-MOSFET | unipolar | -60V | -0.9A | Idm: -4A | 0.806W | SOT23
Transistor: P-MOSFET | unipolar | -60V | -0.9A | Idm: -4A | 0.806W | SOT23
EB Kods: EB1019333163
Ražotāja preces kods: ZXMP6A13FQTA
Ražotāja preces kods:
ZXMP6A13FQTA
Ražotājs, zīmols: DIODES INCORPORATED
Ražotājs, zīmols:
DIODES INCORPORATED
0,83 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Polarisation | unipolar |
Drain-source voltage | -60V |
Drain current | -900mA |
Pulsed drain current | -4A |
Power dissipation | 0.806W |
Case | SOT23 |
Gate-source voltage | ±20V |
On-state resistance | 0.6Ω |
Mounting | SMD |
Gate charge | 2.9nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Application | automotive industry |