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Transistor: P-MOSFET | unipolar | -60V | -0.19A | 170mW | SOT23
Transistor: P-MOSFET | unipolar | -60V | -0.19A | 170mW | SOT23
EB Kods: EB890128907
Ražotāja preces kods: BSH201,215
Ražotāja preces kods:
BSH201,215
Ražotājs, zīmols: NEXPERIA
Ražotājs, zīmols:
NEXPERIA
0,52 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | P-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | -60V |
| Drain current | -0.19A |
| Power dissipation | 0.17W |
| Case | SOT23 |
| Case | TO236AB |
| Gate-source voltage | ±20V |
| On-state resistance | 4.25Ω |
| Mounting | SMD |
| Gate charge | 3nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |
| Features of semiconductor devices | logic level |