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Transistor: P-MOSFET | unipolar | -30V | -4A | 1.6W | SuperSOT-6
Transistor: P-MOSFET | unipolar | -30V | -4A | 1.6W | SuperSOT-6
EB Kods: EB1543259504
Ražotāja preces kods: FDC658AP
Ražotāja preces kods:
FDC658AP
Ražotājs, zīmols: ONSEMI
Ražotājs, zīmols:
ONSEMI
0,83 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | P-MOSFET |
| Technology | PowerTrench® |
| Polarisation | unipolar |
| Drain-source voltage | -30V |
| Drain current | -4A |
| Power dissipation | 1.6W |
| Case | SuperSOT-6 |
| Gate-source voltage | ±25V |
| On-state resistance | 75mΩ |
| Mounting | SMD |
| Gate charge | 8.1nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |
| Features of semiconductor devices | logic level |