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Transistor: P-MOSFET | unipolar | -30V | -35A | Idm: -140A | 35W | TO252AA

EB Kods: EB1478455538

Ražotāja preces kods: 
PJD35P03_L2_00001

Ražotājs, zīmols: 
PanJit Semiconductor

 0,78 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorP-MOSFET
Polarisationunipolar
Drain-source voltage-30V
Drain current-35A
Pulsed drain current-140A
Power dissipation35W
CaseTO252AA
Gate-source voltage±20V
On-state resistance30mΩ
MountingSMD
Gate charge11nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced