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Transistor: P-MOSFET | unipolar | -20V | -100mA | Idm: -0.4A | 200mW

EB Kods: EB263732005

Ražotāja preces kods: 
RU1C001ZPTL

Ražotājs, zīmols: 
ROHM SEMICONDUCTOR

 0,40 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorP-MOSFET
Polarisationunipolar
Drain-source voltage-20V
Drain current-100mA
Pulsed drain current-0.4A
Power dissipation0.2W
CaseSOT323F
Gate-source voltage±10V
On-state resistance6.8Ω
MountingSMD
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate