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Transistor: P-MOSFET | TrenchFET® | unipolar | -60V | -2.9A | Idm: -8A

EB Kods: EB939146555

Ražotāja preces kods: 
SI3459BDV-T1-GE3

Ražotājs, zīmols: 
VISHAY

 1,32 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorP-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage-60V
Drain current-2.9A
Pulsed drain current-8A
Power dissipation3.3W
CaseTSOP6
Gate-source voltage±20V
On-state resistance288mΩ
MountingSMD
Gate charge12nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced