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Transistor: P-MOSFET | TrenchFET® | unipolar | -60V | -2.9A | Idm: -8A
Transistor: P-MOSFET | TrenchFET® | unipolar | -60V | -2.9A | Idm: -8A
Code: EB939146555
Manufacturer's product code: SI3459BDV-T1-GE3
Manufacturer's product code:
SI3459BDV-T1-GE3
Manufacturer, Brand: VISHAY
Manufacturer, Brand:
VISHAY
1,32 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | -60V |
Drain current | -2.9A |
Pulsed drain current | -8A |
Power dissipation | 3.3W |
Case | TSOP6 |
Gate-source voltage | ±20V |
On-state resistance | 288mΩ |
Mounting | SMD |
Gate charge | 12nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |