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Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -8A | Idm: -50A
Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -8A | Idm: -50A
EB Kods: EB1537654960
Ražotāja preces kods: SI3421DV-T1-GE3
Ražotāja preces kods:
SI3421DV-T1-GE3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
0,72 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | P-MOSFET |
| Technology | TrenchFET® |
| Polarisation | unipolar |
| Drain-source voltage | -30V |
| Drain current | -8A |
| Pulsed drain current | -50A |
| Power dissipation | 2.7W |
| Case | TSOP6 |
| Gate-source voltage | ±20V |
| On-state resistance | 19.2mΩ |
| Mounting | SMD |
| Gate charge | 69nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |