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Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -18A | Idm: -100A
Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -18A | Idm: -100A
EB Kods: EB448569584
Ražotāja preces kods: SI7153DN-T1-GE3
Ražotāja preces kods:
SI7153DN-T1-GE3
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
0,58 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | -30V |
Drain current | -18A |
Pulsed drain current | -100A |
Power dissipation | 52W |
Case | PowerPAK® 1212-8 |
Gate-source voltage | ±25V |
On-state resistance | 15mΩ |
Mounting | SMD |
Gate charge | 62nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |