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Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -12.6A | Idm: -32A

EB Kods: EB191241781

Ražotāja preces kods: 
SI4435FDY-T1-GE3

Ražotājs, zīmols: 
VISHAY

 0,65 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorP-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage-30V
Drain current-12.6A
Pulsed drain current-32A
Power dissipation4.8W
CaseSO8
Gate-source voltage±20V
On-state resistance30mΩ
MountingSMD
Gate charge28nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced