Tulkot latviski
Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -12.6A | Idm: -32A
Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -12.6A | Idm: -32A
EB Kood: EB191241781
Tootja kauba kood: SI4435FDY-T1-GE3
Tootja kauba kood:
SI4435FDY-T1-GE3
Tootja, kaubamärk: VISHAY
Tootja, kaubamärk:
VISHAY
0,65 €
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Type of transistor | P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | -30V |
Drain current | -12.6A |
Pulsed drain current | -32A |
Power dissipation | 4.8W |
Case | SO8 |
Gate-source voltage | ±20V |
On-state resistance | 30mΩ |
Mounting | SMD |
Gate charge | 28nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |