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Transistor: P-MOSFET | Trench | unipolar | -60V | -1.6A | Idm: -8A | 1.2W
Transistor: P-MOSFET | Trench | unipolar | -60V | -1.6A | Idm: -8A | 1.2W
EB Kods: EB1716027019
Ražotāja preces kods: SI5618A-TP
Ražotāja preces kods:
SI5618A-TP
Ražotājs, zīmols: MICRO COMMERCIAL COMPONENTS
Ražotājs, zīmols:
MICRO COMMERCIAL COMPONENTS
0,28 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Technology | Trench |
Polarisation | unipolar |
Drain-source voltage | -60V |
Drain current | -1.6A |
Pulsed drain current | -8A |
Power dissipation | 1.2W |
Case | SOT23 |
Gate-source voltage | ±20V |
On-state resistance | 0.24Ω |
Mounting | SMD |
Gate charge | 10.4nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |