Tulkot latviski
Transistor: P-MOSFET | Trench | unipolar | -60V | -1.6A | Idm: -8A | 1.2W
Transistor: P-MOSFET | Trench | unipolar | -60V | -1.6A | Idm: -8A | 1.2W
EB Kood: EB1716027019
Tootja kauba kood: SI5618A-TP
Tootja kauba kood:
SI5618A-TP
Tootja, kaubamärk: MICRO COMMERCIAL COMPONENTS
Tootja, kaubamärk:
MICRO COMMERCIAL COMPONENTS
0,27 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | P-MOSFET |
| Technology | Trench |
| Polarisation | unipolar |
| Drain-source voltage | -60V |
| Drain current | -1.6A |
| Pulsed drain current | -8A |
| Power dissipation | 1.2W |
| Case | SOT23 |
| Gate-source voltage | ±20V |
| On-state resistance | 0.24Ω |
| Mounting | SMD |
| Gate charge | 10.4nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |