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Transistor: P-MOSFET | Trench | unipolar | -20V | -700mA | Idm: -2.8A
Transistor: P-MOSFET | Trench | unipolar | -20V | -700mA | Idm: -2.8A
EB Kods: EB1207599885
Ražotāja preces kods: PMZ350UPEYL
Ražotāja preces kods:
PMZ350UPEYL
Ražotājs, zīmols: NEXPERIA
Ražotājs, zīmols:
NEXPERIA
0,32 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | P-MOSFET |
Technology | Trench |
Polarisation | unipolar |
Drain-source voltage | -20V |
Drain current | -700mA |
Pulsed drain current | -2.8A |
Case | DFN1006-3 |
Case | SOT883 |
On-state resistance | 645mΩ |
Mounting | SMD |
Gate charge | 1.9nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |