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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 90A | Idm: 240A | 542W

EB Kods: EB404309567

Ražotāja preces kods: 
G3R20MT12K

Ražotājs, zīmols: 
GeneSiC SEMICONDUCTOR

52,43 €
Ar PVN / gb
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Product Properties

Type of transistorN-MOSFET
TechnologyG3R™
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current90A
Pulsed drain current240A
Power dissipation542W
CaseTO247-4
Gate-source voltage-5...15V
On-state resistance20mΩ
MountingTHT
Gate charge219nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesKelvin terminal