Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 90A | Idm: 240A | 542W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 90A | Idm: 240A | 542W
EB Kood: EB404309567
Tootja kauba kood: G3R20MT12K
Tootja kauba kood:
G3R20MT12K
Tootja, kaubamärk: GeneSiC SEMICONDUCTOR
Tootja, kaubamärk:
GeneSiC SEMICONDUCTOR
50,53 €
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Saadaval tarnija laos >10 tk
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| Type of transistor | N-MOSFET |
| Technology | G3R™ |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 90A |
| Pulsed drain current | 240A |
| Power dissipation | 542W |
| Case | TO247-4 |
| Gate-source voltage | -5...15V |
| On-state resistance | 20mΩ |
| Mounting | THT |
| Gate charge | 219nC |
| Kind of package | tube |
| Kind of channel | enhanced |
| Features of semiconductor devices | Kelvin terminal |