Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 84A | Idm: 295A | 715W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 84A | Idm: 295A | 715W
EB Kods: EB1340395568
Ražotāja preces kods: DIW120SIC028
Ražotāja preces kods:
DIW120SIC028
Ražotājs, zīmols: DIOTEC SEMICONDUCTOR
Ražotājs, zīmols:
DIOTEC SEMICONDUCTOR
33,37 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 84A |
| Pulsed drain current | 295A |
| Power dissipation | 715W |
| Case | TO247-3 |
| Gate-source voltage | -5...20V |
| On-state resistance | 26mΩ |
| Mounting | THT |
| Gate charge | 373nC |
| Kind of package | tube |
| Kind of channel | enhancement |