Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 84A | Idm: 295A | 715W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 84A | Idm: 295A | 715W
EB Kood: EB1340395568
Tootja kauba kood: DIW120SIC028
Tootja kauba kood:
DIW120SIC028
Tootja, kaubamärk: DIOTEC SEMICONDUCTOR
Tootja, kaubamärk:
DIOTEC SEMICONDUCTOR
33,37 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 1.2kV |
Drain current | 84A |
Pulsed drain current | 295A |
Power dissipation | 715W |
Case | TO247-3 |
Gate-source voltage | -5...20V |
On-state resistance | 26mΩ |
Mounting | THT |
Gate charge | 373nC |
Kind of package | tube |
Kind of channel | enhancement |