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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 50A | Idm: 140A | 333W

EB Kods: EB1243956864

Ražotāja preces kods: 
G3R40MT12D

Ražotājs, zīmols: 
GeneSiC SEMICONDUCTOR

 23,14 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyG3R™
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current50A
Pulsed drain current140A
Power dissipation333W
CaseTO247-3
Gate-source voltage-5...15V
On-state resistance40mΩ
MountingTHT
Gate charge106nC
Kind of packagetube
Kind of channelenhanced