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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 46A | Idm: 100A | 278W

EB Kods: EB1276648694

Ražotāja preces kods: 
DIW120SIC059-AQ

Ražotājs, zīmols: 
DIOTEC SEMICONDUCTOR

 30,59 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current46A
Pulsed drain current100A
Power dissipation278W
CaseTO247-3
Gate-source voltage-4...18V
On-state resistance65mΩ
MountingTHT
Gate charge121nC
Kind of packagetube
Kind of channelenhanced
Applicationautomotive industry