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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 15A | Idm: 66A | 156W

EB Kods: EB385299500

Ražotāja preces kods: 
S2M0120120K

Ražotājs, zīmols: 
SMC DIODE SOLUTIONS

 5,08 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current15A
Pulsed drain current66A
Power dissipation156W
CaseTO247-4
Gate-source voltage-5...20V
On-state resistance212mΩ
MountingTHT
Gate charge29.6nC
Kind of packagetube
Kind of channelenhancement
Features of semiconductor devicesKelvin terminal