Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 15A | Idm: 66A | 153W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 15A | Idm: 66A | 153W
EB Kods: EB129557345
Ražotāja preces kods: S2M0120120J
Ražotāja preces kods:
S2M0120120J
Ražotājs, zīmols: SMC DIODE SOLUTIONS
Ražotājs, zīmols:
SMC DIODE SOLUTIONS
6,05 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 15A |
| Pulsed drain current | 66A |
| Power dissipation | 153W |
| Case | D2PAK-7 |
| Gate-source voltage | -5...20V |
| On-state resistance | 212mΩ |
| Mounting | SMD |
| Gate charge | 29.6nC |
| Kind of package | tube |
| Kind of channel | enhancement |
| Features of semiconductor devices | Kelvin terminal |