Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 12A | Idm: 40A | 130W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 12A | Idm: 40A | 130W
EB Kods: EB638476015
Ražotāja preces kods: S2M0160120K
Ražotāja preces kods:
S2M0160120K
Ražotājs, zīmols: SMC DIODE SOLUTIONS
Ražotājs, zīmols:
SMC DIODE SOLUTIONS
3,59 €
Bez PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 12A |
| Pulsed drain current | 40A |
| Power dissipation | 130W |
| Case | TO247-4 |
| Gate-source voltage | -5...20V |
| On-state resistance | 0.3Ω |
| Mounting | THT |
| Gate charge | 26.5nC |
| Kind of package | tube |
| Kind of channel | enhancement |
| Features of semiconductor devices | Kelvin terminal |