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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 100A | Idm: 260A | 600W

EB Kods: EB1129940394

Ražotāja preces kods: 
DIW120SIC023-AQ

Ražotājs, zīmols: 
DIOTEC SEMICONDUCTOR

 101,09 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current100A
Pulsed drain current260A
Power dissipation600W
CaseTO247-3
Gate-source voltage-4...18V
On-state resistance29mΩ
MountingTHT
Gate charge45nC
Kind of packagetube
Kind of channelenhanced
Applicationautomotive industry