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Transistor: N-MOSFET | unipolar | 800V | 1.9A | 24W | PG-TO252-3

EB Kods: EB1511695948

Ražotāja preces kods: 
IPD80R2K0P7ATMA1

Ražotājs, zīmols: 
INFINEON TECHNOLOGIES

1,47 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyCoolMOS™ P7
Polarisationunipolar
Drain-source voltage800V
Drain current1.9A
Power dissipation24W
CasePG-TO252-3
Gate-source voltage±20V
On-state resistance2Ω
MountingSMD
Gate charge9nC
Kind of channelenhanced
Features of semiconductor devicesESD protected gate