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Transistor: N-MOSFET | unipolar | 60V | 36A | Idm: 200A | 50W | PG-TDSON-8

EB Kods: EB1320914766

Ražotāja preces kods: 
BSC100N06LS3GATMA1

Ražotājs, zīmols: 
INFINEON TECHNOLOGIES

2,04 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyOptiMOS™ 3
Polarisationunipolar
Drain-source voltage60V
Drain current36A
Pulsed drain current200A
Power dissipation50W
CasePG-TDSON-8
Gate-source voltage±20V
On-state resistance10mΩ
MountingSMD
Gate charge45nC
Kind of channelenhanced
Features of semiconductor deviceslogic level