Tulkot latviski
Transistor: N-MOSFET | unipolar | 60V | 36A | Idm: 200A | 50W | PG-TDSON-8
Transistor: N-MOSFET | unipolar | 60V | 36A | Idm: 200A | 50W | PG-TDSON-8
EB Kood: EB1320914766
Tootja kauba kood: BSC100N06LS3GATMA1
Tootja kauba kood:
BSC100N06LS3GATMA1
Tootja, kaubamärk: INFINEON TECHNOLOGIES
Tootja, kaubamärk:
INFINEON TECHNOLOGIES
1,83 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET |
Technology | OptiMOS™ 3 |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 36A |
Pulsed drain current | 200A |
Power dissipation | 50W |
Case | PG-TDSON-8 |
Gate-source voltage | ±20V |
On-state resistance | 10mΩ |
Mounting | SMD |
Gate charge | 45nC |
Kind of channel | enhanced |
Features of semiconductor devices | logic level |