Tulkot latviski
Transistor: N-MOSFET | unipolar | 60V | 300mA | Idm: 0.8A | 350mW | SOT23
Transistor: N-MOSFET | unipolar | 60V | 300mA | Idm: 0.8A | 350mW | SOT23
EB Kods: EB1201373918
Ražotāja preces kods: DMN601K-7
Ražotāja preces kods:
DMN601K-7
Ražotājs, zīmols: DIODES INCORPORATED
Ražotājs, zīmols:
DIODES INCORPORATED
0,0474 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 0.3A |
Pulsed drain current | 0.8A |
Power dissipation | 0.35W |
Case | SOT23 |
Gate-source voltage | ±20V |
On-state resistance | 3Ω |
Mounting | SMD |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |