Tulkot latviski

Transistor: N-MOSFET | unipolar | 60V | 1.8A | 1.06W | SOT23

EB Kods: EB1907120140

Ražotāja preces kods: 
SI2308BDS-T1-GE3

Ražotājs, zīmols: 
VISHAY

 0,77  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorN-MOSFET
Polarisationunipolar
Drain-source voltage60V
Drain current1.8A
Power dissipation1.06W
CaseSOT23
Gate-source voltage±20V
On-state resistance192mΩ
MountingSMD
Gate charge2.3nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced