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Transistor: N-MOSFET | unipolar | 600V | 4A | Idm: 16A | 30W | PG-TO252-3

EB Kods: EB1593851885

Ražotāja preces kods: 
IPD60R600P7SAUMA1

Ražotājs, zīmols: 
INFINEON TECHNOLOGIES

0,85 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyCoolMOS™ P7
Polarisationunipolar
Drain-source voltage600V
Drain current4A
Pulsed drain current16A
Power dissipation30W
CasePG-TO252-3
Gate-source voltage±20V
On-state resistance0.6Ω
MountingSMD
Gate charge9nC
Kind of channelenhanced
Features of semiconductor devicesESD protected gate