Tulkot latviski

Transistor: N-MOSFET | unipolar | 600V | 4A | Idm: 16A | 30W | PG-TO252-3

EB Kood: EB1593851885

Tootja kauba kood: 
IPD60R600P7SAUMA1

Tootja, kaubamärk: 
INFINEON TECHNOLOGIES

0,85 
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorN-MOSFET
TechnologyCoolMOS™ P7
Polarisationunipolar
Drain-source voltage600V
Drain current4A
Pulsed drain current16A
Power dissipation30W
CasePG-TO252-3
Gate-source voltage±20V
On-state resistance0.6Ω
MountingSMD
Gate charge9nC
Kind of channelenhanced
Features of semiconductor devicesESD protected gate