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Transistor: N-MOSFET | unipolar | 600V | 0.4A | 3.3W | SOT223

EB Kods: EB1258367434

Ražotāja preces kods: 
STN1HNK60

Ražotājs, zīmols: 
STMicroelectronics

0,50 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySuperMesh™
Polarisationunipolar
Drain-source voltage600V
Drain current0.4A
Power dissipation3.3W
CaseSOT223
Gate-source voltage±30V
On-state resistance8.5Ω
MountingSMD
Kind of packagereel
Kind of packagetape
Kind of channelenhanced
Features of semiconductor devicesESD protected gate